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| 2SK2008 Silicon N Channel MOS FET Application High speed power switching TO-3PFM Features * * * * * Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter,Motor Control 2 1 1 3 2 3 1. Gate 2. Drain 3. Source Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 250 30 20 80 20 60 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25 C 2SK2008 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 250 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS =200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 10 A VGS = 10 V * ID = 10 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 10 A VGS = 10 V RL = 3 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 30 -- -- V -------------------------------------------------------------------------------------- -- -- 2.0 -- -- -- -- 0.12 10 250 3.0 0.15 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 9.0 14 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test See chracteristic curves of 2SK2007 -- -- -- -- -- -- -- -- 2340 1000 160 30 125 190 100 1.2 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 20 A, VGS = 0 IF = 20 A, VGS = 0, diF / dt = 100 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 120 -- ns -------------------------------------------------------------------------------------- |
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